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-500mA / -50V Digital transistors (with built-in resistors)
DTB123EK
Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on / off conditions need to be set for operation, making the device design easy. Structure PNP epitaxial planar silicon transistor (Resistor built-in type) Packaging specifications
Package Packaging type Code Basic ordering unit (pieces) SMT3 Taping T146 3000
IN R2 R1 OUT
Dimensions (Unit : mm)
DTB123EK
2.9 0.4
(3)
1.6 2.8
1.1 0.8
(2)
(1)
0.95 0.95 0.15 1.9
ROHM : SMT3 EIAJ : SC-59
(1) GND (2) IN (3) OUT Each lead has same dimensions
Abbreviated symbol : F12
Inner circuit
Part No. DTB123EK
GND(+)
IN
OUT GND(+)
Absolute maximum ratings (Ta=25C)
Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IC PD Tj Tstg Limits DTB123EK -50 -12 to +10 -500 200 150 -55 to +150 V V mA mW C C Unit
R1=R2=2.2k
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1/2
0.3Min.
2009.06 - Rev.C
DTB123EK
Electrical characteristics (Ta=25C)
Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. - -3 - - - 39 1.54 0.8 - Typ. - - -0.1 - - - 2.2 1 200 2.86 1.2 - Max. -0.5 - -0.3 -3.8 -0.5 Unit V V mA A - k - MHz Conditions VCC= -5V, IO= -100A VO= -0.3V, IO= -20mA IO/II= -50mA/-2.5mA VI= -5V VCC= -50V, VI=0V VO= -5V, IO= -50mA - - VCE= -10V, IE= 50mA, f= 100MHz
Data Sheet
Characteristics of built-in transistor
Electrical characteristic curves
-100 -50
INPUT VOLTAGE : VI (on) (V)
VO= -0.3V
OUTPUT CURRENT : Io (A)
-10m -5m -2m -1m -500 -200 -100 -50 -20 -10 -5 -2 -1 Ta=100 C 25 C -40 C
VCC= -5V
1k 500
VO= -5V
DC CURRENT GAIN : GI
-20 -10 -5 -2 -1 -500m -200m -100m -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m Ta=25 C -40 C 100 C
200 100 50 20 10 5 2 Ta=100 C 25 C -40 C
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
1 -0.5m -1m -2m
-5m -10m -20m
-50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : IO (A)
Fig.1
Input voltage vs. output current (ON characteristics)
Fig.2 Output current vs. input voltage (OFF characteristics)
Fig.3
DC current gain vs. output current
-1 -500m
OUTPUT VOLTAGE : VO (on) (V)
lO/lI=20 Ta=100 C 25 C -40 C
-200m -100m -50m -20m -10m -5m -2m -1m -0.5m -1m -2m
-5m -10m -20m
-50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.4
Output voltage vs. output current
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c 2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.06 - Rev.C
Notice
Notes
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